Abstract
Abstract Several ferroelectric thin films with n-type or p-type conductivity, including undoped and doped PZT (Lead-Zirconate Titanate), BaTiO3 (Barium Titanate), SBN (Strontium-Barium Niobate), KNbO3 (Potassium Niobate) as well as PBN (Lead Barium Niobate) were made on the silicon substrates by the sol-gel process Self biased heterojunction effects were observed. It has been observed that either p-n junction or n-p junction in the ferroelectric-semiconductor systems behave like a rectifying diode. A physical explaination has been constructed in explaining this effect.
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