Abstract
SiGe nanoparticles with uniform diameter of about 30nm in the top silicon of silicon on insulator (SOI) were synthesized by Ge ion implantation combined with subsequent annealing process. The density of those nanoparticles is 6×107/cm2. These nanoparticles are formed by agglomeration of the recoil atoms and the migrated adatoms. The method presented in this study will allow efficient fabrication of uniform SiGe nanoparticles into SOI.
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