Abstract

The reliability of copper/epoxy bonding is important for power semiconductors. It has been found that copper can diffuse into epoxy and accelerate epoxy decomposition at high temperatures, deteriorating reliability. We proposed a way to inhibit copper diffusion into epoxy by using self-assembled layers. Copper substrates with self-assembled layers on their surface were encapsulated with epoxy and placed at 200 °C for 1000 h. The diffusion of copper into epoxy was evaluated by XPS depth profiling, and the decomposition of epoxy was evaluated by ATR-FTIR. The results showed that self-assembled layers can effectively hinder copper diffusion into epoxy. The possible reason is that the existence of the self-assembled layer greatly reduces the formation of copper ions. Also, we found that the self-assembled layer survived the heating, implying its potential for practical power module applications.

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