Abstract
We present ultra-shallow (5-30 nm) diffusion profiles performed by short-time boron diffusion from the gas phase into the n-type Si(100) wafer using controlled surface injection of selfinterstitials and vacancies. The diffusion profiles of this art are found to consist of both self-assembled longitudinal and lateral quantum wells formed naturally between the δ barriers heavily doped with boron. The deformed potential fluctuations created by self-interstitials microdefects embedded into the p-diffusion profile are shown to cause the formation of self-assembled microcavities that are revealed by the light transmission spectra.
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