Light emission from erbium-doped nanostructures embedded in silicon microcavities

Abstract

We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) embedded in silicon microcavities that exhibit a distributed feedback identified by the FIR transmission spectra. The photo and electroluminescence from SQW is found to be enhanced in the range of the Rabi splitting. The intraband hole transitions are shown to give rise to a fast energy transfer into the d- shell transitions of the center incorporated into the microcavity which is caused by strong sp-d mixing in built- in electric field and revealed by the intracenter emission. Besides, high efficient Er3+-related 4I13/2 $ARLR 4I15/2 absorption and emission a re observed from self-assembled quantum wells (SQW) embedded in silicon microcavities. The microcavities of this art are prepared by the short-time diffusion of boron into the Si(100) wafer doped with erbium. The intraband electron transitions accompanied by tunneling through strongly coupled SQW series are found to excite the 4I13/2 yields 4I15/2Er3+-intracenter emission that is enhanced in the range of the Rabi splitting revealed by the transmission spectra.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.