Abstract
The self-aligned titanium silicide device technology has been studied by using NH3 plasma assisted thermal annealing and ion implant through titanium metal or silicide film. Enhanced surface nitridation of titanium by activated species suppresses lateral silicide growth and oxide contamination. NH3 plasma assisted annealing can be used as an effective method to form TiSi2 and activate implanted dopant. P+N junction and P channel metal–oxide–semiconductor field-effect transistor can be produced by boron implant through Ti metal or its silicide and the NH3 plasma assisted thermal annealing.
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