Abstract
For organic thin-film transistors where source-drain contacts are defined on the gate dielectric prior to the deposition of the semiconductor (“bottom-contact” configuration), the gate dielectric is often treated with a self-assembled molecular monolayer prior to deposition of the organic semiconductor. In this letter, we describe a method to apply an ultrathin solution-processed polymer layer as surface treatment. Our method is compatible with the use of the bottom-contact configuration, despite the fact that the polymeric surface treatment does not stand a photolithographic step. Furthermore, we show that our surface treatment results in superior transistor performance.
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