Abstract
We report the realization of flexible fully-transparent high-voltage (HV) inverters composed with a high-voltage thin film transistor (HVTFT) drive and an on-chip high-voltage thin film diode (HVTFD) load. The overall fabrication temperatures are decreased as low as 75 °C to minimize the built-in strain caused by the large thermal expansion mismatch. High on/off ratio of 1010, rectification ratio of 109 and voltage gain of 8.5 are achieved in the flexible HVTFT, HVTFD and HV inverter, respectively. In addition, the flexible HV devices are fabricated with a novel self-aligned photolithography technology, and the fabrication procedure and working principle are depicted in this letter. This work combines HV electronics with the upsurging flexible transparent electronics, and will initiate interdisciplinary researches between the two fields.
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