Abstract
AbstractThis paper demonstrates the fabrication of self‐aligned gate‐last enhancement‐ and depletion‐mode (E/D‐mode) AlN/GaN metal‐oxide‐semiconductor high‐electron‐mobility‐transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage (Vth) are analyzed. The E and D‐mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show Vth = +0.3 V after post‐gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show Vth= ‐1.8 V. In the E‐mode (Ni/Au gated) transistors, the Vth shift after post‐gate annealing is due to the decrease of fixed charges at the Al2O3/GaN interface. An investigation has been conducted for the understanding of the Vth shift, which is crucial for improving the transistors' stability in various applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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