Abstract
SiGe heteroepitaxy on Si (001) substrates induces three-dimensional Stranski–Krastanow growth. In this work, in-plane nanowires were produced during the growth of Si0.8Ge0.2 onto rib-patterned Si (001) templates oriented in [010] direction. Atomic force microscopy reveals initially hut-shaped SiGe islands on the upper (001) area of the ribs form extended nanowires with lengths of up to 10 μm via coalescence and self-alignment to the rib direction. Finite element simulations show that these phenomena can be attributed to the minimization of the surface and strain energy density. This method provides a route towards devices based on in-plane SiGe nanowires.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
