Self-aligned complementary GaAs MISFETs using alow-temperature-grown GaAs gate insulator

Abstract

GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs, respectively. With a 1.5 µm gate length, the maximum drain current is 40 and 120 mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500 mA/mm for a normally-on n-channel device.