Abstract
The effects of n-type dopant on InP embedding regrowth by metalorganic vapor phase epitaxy (MOVPE) are studied. It is found that the growth of the n-InP layer on the mesa structure is completely suppressed under a Se concentration of more than 8×1018 cm−3 and a mesa structure having a width of 1.1 μm. Using this novel MOVPE technique, a buried heterostructure laser diode is successfully fabricated without a selective growth mask. This achieves a threshold current as low as 14 mA, an external differential efficiency of 0.18 W/A, and an output power of more than 15 mW, at 25 °C.
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