Abstract
We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height Phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Bn</sub> and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low Phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Bn</sub> of 0.1 eV on Si:C S/D stressors. Comparable sheet resistance and junction leakage are observed with and without Se segregation. When integrated in nanoscale SOI n-FETs with Ni-silicided Si:C S/D, the new Se-segregation contact technology achieves 36% reduction in total series resistance and 32% I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> enhancement. Linear transconductance G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MLin</sub> also shows large enhancement in the sample with Se-segregated contacts.
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