Abstract
GaAsN bulk and GaAsN/GaAs single quantum wells grown by molecular beam epitaxy are studied by selectively excited photoluminescence (PL) measurements. A significant difference is observed in the PL spectra when the excitation energy is set below or above the band gap of GaAs for the GaAsN/GaAs quantum well samples, while the spectral features of GaAsN bulk are not sensitive to the excitation energy. The observed difference in PL of the GaAsN/GaAs quantum well samples is attributed to the exciton localization effect at the GaAsN/GaAs interfaces, which is directly correlated with the transfer and trap processes of the photogenerated carriers from GaAs into GaAsN through the heterointerfaces. This interface-related exciton localization effect can be greatly reduced by a rapid thermal annealing process, making the PL be dominated by the intrinsic delocalized transition in GaAsN/GaAs.
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