Abstract
Patterned layers of Al2O3 prepared by atomic layer deposition (ALD) are used to produce structures of alternating polarity (c-plane orientation) of GaN on Ga-polar GaN epilayers. Annealing prior to epitaxial growth allows the amorphous ALD layers to attain sufficient crystallinity, which enables N-polar GaN growth over the annealed ALD Al2O3 and Ga-polar growth over the bare substrate. Transmission electron microscopy and electron channeling contrast imaging were carried out to characterize the structural nature of the material and confirm crystallinity. ALD Al2O3 may be suitable for fabricating novel variable-polarity devices, particularly where growth on native, Ga-polar GaN substrates is beneficial.
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