Abstract
The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al2O3) shells. The Al2O3 was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H2O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).
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