Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module

Abstract

Low-temperature epitaxial growth of Si and Si1−xGex (referred to as SiGe, hereafter) has been obtained using an industrial, 200 mm, single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content ⩽30% have been studied for buried channel applications in (PMOSFET) devices or as base for heterojunction bipolar transistors (HBTs). The dependence of Si and SiGe deposition rates on filling ratio and exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. In contrast to selective Si growth where the global loading effect decreases slowly with temperature, the growth rate of SiGe at low temperature is strongly dependent on the oxide coverage. The addition of HCl into the gas mixture allows minimizing the dependence of the SiGe growth rate on both oxide coverage and window size. The effect of the addition of HCl on Ge and dopants incorporation is investigated on bare and/or device wafers. Results on facet formation and orientations are also presented for selective Si and SiGe growths. Finally, we report basic electrical results on selective Si epitaxial and SiGe heteroepitaxial structures, which have been integrated in PMOSFET and HBT devices.