Abstract
During the past four years, the Defense Advanced Research Project Agency (DARPA) through its antimonide-based compound semiconductor (ABCS) program has sponsored development of high-electron-mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) devices and circuits based on narrow-band-gap materials such as InAs or Inx Ga1-xAs with high In composition (x). These development efforts have sought to exploit the very high electron mobility and peak electron velocity of InAs for high speed circuit applications requiring very low power dissipation. At Northrop Grumman Space Technology (NGST), InAs/AlSb HEMT and In0.86Ga0.14As/In0.86Al0.14 As HBT devices have successfully been developed, and ultra-low-power circuits have successfully been demonstrated for both of these device technologies
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