Abstract
A short exposure of polymer films containing Si, Al, Bi, and other metals to hydrogen reactive ion etching (RIE) reduces their oxygen RIE resistance dramatically. Preferential removal of Si, Al, or other metal atoms in hydrogen RIE is responsible for this reduction of the etch resistance. Selective removal of these atoms by hydrogen RIE may be important in dry stripping of organometallic resist films. Positive tone polymer images can be fabricated by selective removal of metal atoms. Conversely, patternwise deposition of an organometallic compound in H+ beam‐induced polymerization or after H+ beam‐induced decarboxylation gave rise to negative or positive tone polymer images, respectively, by dry image development.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
