Abstract
The plasmon-enhanced photoresponse properties of a Ag nanoparticle decorated Bi2Se3 nanosheet (AGBS)/p-Si heterojunction device have been studied. The Ag nanoparticles, Bi2Se3 nanosheets, and AGBS nanocomposite are synthesized chemically. Microscopic investigations, ultimately of the AGBS nanocomposite, reveal that the Bi2Se3 nanosheets of thickness ∼20 nm and lateral dimension ∼1 μm are decorated with Ag nanoparticles of sizes 20–40 nm in the nanocomposite. The x-ray diffraction pattern of AGBS shows that apart from being in a metallic state, the Ag in the AGBS is also in the form of compounds with Bi, Se, and additionally O. This observation is further complemented by the x-ray photoelectron spectrum, which shows the presence of Ag0 and Ag+ states of Ag in AGBS. The UV–visible absorption spectra show the plasmonic peak of the Ag nanoparticles occurs at 420 nm; the peak is shifted to ∼500 nm in AGBS due to the modified dielectric environment of the nanoparticles. The AGBS/p-Si heterojunction shows excellent photoresponse properties, with a responsivity of 0.28 A/W, a fairly high detectivity of 4 × 1010 Jones, and an EQE of 71% under 10 V reverse bias at a 500 nm wavelength. The plasmon enhanced photoresponse at the selective wavelength makes this material attractive for high performance optoelectronic devices.
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