Abstract

The plasmon-enhanced photoresponse properties of a Ag nanoparticle decorated Bi2Se3 nanosheet (AGBS)/p-Si heterojunction device have been studied. The Ag nanoparticles, Bi2Se3 nanosheets, and AGBS nanocomposite are synthesized chemically. Microscopic investigations, ultimately of the AGBS nanocomposite, reveal that the Bi2Se3 nanosheets of thickness ∼20 nm and lateral dimension ∼1 μm are decorated with Ag nanoparticles of sizes 20–40 nm in the nanocomposite. The x-ray diffraction pattern of AGBS shows that apart from being in a metallic state, the Ag in the AGBS is also in the form of compounds with Bi, Se, and additionally O. This observation is further complemented by the x-ray photoelectron spectrum, which shows the presence of Ag0 and Ag+ states of Ag in AGBS. The UV–visible absorption spectra show the plasmonic peak of the Ag nanoparticles occurs at 420 nm; the peak is shifted to ∼500 nm in AGBS due to the modified dielectric environment of the nanoparticles. The AGBS/p-Si heterojunction shows excellent photoresponse properties, with a responsivity of 0.28 A/W, a fairly high detectivity of 4 × 1010 Jones, and an EQE of 71% under 10 V reverse bias at a 500 nm wavelength. The plasmon enhanced photoresponse at the selective wavelength makes this material attractive for high performance optoelectronic devices.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call