Abstract
Selective oxidation of poly-Si in Si/SiO2/Ge(NCs)/poly-Si structure was proposed as the method of tunable synthesis of a control insulator in a memory device with Ge nanocrystals (NCs). Different behavior of oxidation resulting in partial and total oxidation of poly-Si was investigated using spectral ellipsometry and capacitance–voltage (CV) techniques. The ∼2.1 V memory window corresponding to the electron and hole charging/discharging processes in NCs was obtained in Si/SiO2/Ge(NCs)/SiO2 structure. To compare the experimental and calculated CV characteristics the energies of the electron and hole ground states were determined.
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