Selective molecular beam epitaxial growth for multifunction microwave monolithic and opto-electronic integrated circuits

Abstract

Multifunction microwave monolithic integrated circuits (MMICs) and opto-electronic integrated circuits (OEICs) on both GaAs and InP based substrates have been demonstrated by a solid source molecular beam epitaxial (MBE) selective regrowth process. Typical MBE regrown 0.25 μm pseudomorphic high electron mobility transistors (PHEMTs) have demonstrated an extrinsic transconductance, g m , of over 560 mS/mm with an extrinsic current gain cut-off frequency of 70 GHz with good multifunction MMIC circuit yield (⪢ 70%). For MBE selectively regrown, lattice matched 0.15 μm InAlAs/InGaAs/InP high electron mobility transistor (HEMTs), an extrinsic g m of 1000 mS/mm with a current gain cut-off frequency of approximately 200 GHz have been achieved. Using the small area (e.g., 20 μm or less in dimension) MBE selective regrowth to provide two-dimensional strain relaxation, a large lattice mismatched In 0.53Ga 0.47As MIN photodetector has been demonstrated on GaAs substrates with an operational frequency up to 50 GHz.