Abstract
This work demonstrates selective light emission from organic light-emitting diodes (OLEDs) with an Al/tris(8-hydroxyquinoline) aluminum N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1, 1′biphenyl-4, 4′-diamine/nickel-embedded indium tin oxide (ITO)/ polyethylene teraphythalate film structure. Embedding Ni in the surfaces of ITO anodes can reduce the OLED turn-on voltage by 2.3V, allowing the OLED to be selectively emitted. This approach based on Ni-embedded ITO approach can prevent crosstalks in passive OLED addressing because the lateral electric current is negligible outside the Ni-embedded area. It also reduces the roughness of the ITO surface by polishing. Therefore, this method can simultaneously improve the optoelectrical characteristics and increase the lifetime of an OLED device.
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