Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface

Abstract

AbstractSelective growth of InN on the round opening patterned GaAs (111)B substrate was performed for improving the crystalline quality such as the density of threading dislocations by metalorganic vapour phase epitaxy. Due to the large sticking coefficient of indium (In) on SiO2, deposition of polycrystalline InN was occurred on SiO2 mask at low temperature around 550 °C. On the contrary, selective growth of InN layer without the deposition on the SiO2 mask could be possible by raising the growth temperature up to 615 °C. It was also found that the decomposition of InN occurred at the interface between InN and GaAs substrate during the growth. Crystalline quality of InN was strongly influenced by the decomposition of InN at the interface due to the mixing of N‐polarity and In‐polarity domains at the interface. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)