Abstract
A novel process, which employs yttria-stabilized zirconia (YSZ) as a thin film mask, has been developed to obtain selective growth of diamond films. YSZ films were prepared by pulsed ArF excimer laser deposition and rf-diode sputtering, the latter of which offered a much better masking effect than the former when the diamond film was grown by microwave plasma-assisted chemical vapor deposition with CO/H2 source gas. In scanning electron microscope images, the edge part of the selectively grown diamond film revealed a morphology somewhat different from that of the central part. Observed areal distribution of the morphology is an indication of migration of the growth species on the YSZ film mask.
Published Version
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