Abstract
Triode-type radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) equipment has been used in order to grow well-aligned carbon nanotubes on Si and glass substrates below 600 °C. This CVD equipment allows the growth of a well-aligned carbon nanotube with an inside and an outside diameter of 7 and 17 nm, respectively. The selective growth of the CNT was demonstrated.
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