Abstract
Amorphous carbon (α-C) films were deposited on PbLaZrTiOx (PLZT) capacitors by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The α-C films of 20nm prepared with different deposition pressure, methane concentration and RF power were investigated as a hydrogen barrier layer for ferroelectric random access memory (FeRAM) integration. The α- C films contained atomic hydrogen as shown by Fourier transform infrared spectrometry (FT-IR) and exhibited a possibility to suppress the hydrogen degradation of ferroelectric properties.
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