Abstract
The low temperature growth and the selective growth of the carbon nanotube (CNT) were studied using the triode-type radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) equipment. The aligned CNTs −2.6 μm in length and −10 11/cm 2 in density were vertically grown at 550 °C on the Si substrate. Moreover, the selective growth of the CNT was performed using the photolithography method.
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