Selective Generation of Defects in Polydiacetylene Langmuir-Blodgett Films on Si Substrates as Studied by X-Ray Photoelectron Spectroscopy

Abstract

The defects in Langmuir-Blodgett films formed on Silicon substrates at the early stages of the accumulation process were studied by X-ray photoelectron spectroscopy for the first time. It was found that the defects are generated even in the first monolayer, especially on the thickly oxidized area and that the defects due to molecular elimination are generated selectively on the thickly oxidized area when the second layer is accumulated on the first layer. From this study, inelstic mean free paths of low-energy electrons in polymer material were also obtained, which are valuable for the analyses of their trajectories.