Abstract
In this work, we investigated etching characteristics of BST thin films and higher selectivity of BST over Si using inductive coupled O 2/Cl 2/Ar plasma (ICP) system. The maximum etch rate of BST thin films and selectivity of BST over Si were 61.5 nm/min at a O 2 addition of 1 sccm, 9.52 at a O 2 addition of 4 sccm into the Cl 2(30%)/Ar(70%) plasma, respectively. Plasma diagnostics was performed by Langmuir probe (LP), optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS). These results confirm that the increased etch rates at O 2 addition of 1 sccm is the result of the enhanced chemical reaction between BST and Cl radicals and an ion bombardment effect.
Published Version
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