Abstract
An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process. The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 nm. Compared to the previously reported Si resonant-cavity Si photodetectors, this photodiode process is more compatible with Si integrated circuit technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
