Selective deposition of diamond films on insulators by selective seeding with a double-layer mask

Abstract

Polycrystalline diamond films have been patterned on Si 3N 4/Si and SiO 2/Si substrates by selective seeding with a double-layer mask via hot-filament chemical vapor deposition. High quality in the patterned diamond films and high selectivity were obtained by the process. The diamond films deposited on the insulators at different CH 4/H 2 concentrations were studied by scanning electron microscopy and Raman spectroscopy. The process proved to be far less damaging to the substrates, and yet effective in developing patterns of diamond films on a large and different substrate.