Selective area deposition of diamond thin films on patterns of porous silicon by hot-filament chemical vapor deposition

Abstract

Diamond thin films, 5 μm in thickness, were grown selectively on patterns of porous silicon by hot-filament chemical vapor deposition (HFCVD). Monocrystalline p-type silicon substrates, with (100) orientation and resistivity 5–15 Ω cm, were patterned by conventional photolithography to provide a photoresist mask for selective anodization. The polycrystalline diamond films thus formed were studied by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy which revealed high selectivity and high quality diamond films. This process proved to be simple and yet effective in developing patterns of diamond film in different shapes and sizes.