Abstract

Diamond films were deposited on the pretreated silicon or on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We can increase the diamond nucleation density by the cyclic process, irrespective of the substrate kinds and deposition conditions. Using the cyclic process, we can certainly enhance the selective deposition of diamond film on glass substrate. The cyclic process is the in situ method carried out by the cyclic modulation of the source gas flow rate during the initial deposition stage. Surface morphologies and diamond qualities of the films have been investigated. Based on these results, we discuss the cause for the enhancement of the selectivity of diamond film deposition on glass substrate by the cyclic process. © 2001 The Electrochemical Society. All rights reserved.

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