Abstract
The recent development of a high-aspect ratio Si etch (HARSE) process has enabled the fabrication of a variety of Si structures where deep trench etching is necessary. The HARSE process relies on the formation of a sidewall etch inhibitor to prevent lateral etching of the Si structures during exposure to an aggressive SF{sub 6}/Ar plasma etch chemistry. The process yields highly anisotropic profiles with excellent dimensional control for high aspect ratio features. In this study, Si etch rates and etch selectivities to photoresist are reported as a function of chamber pressure, cathode rf-power, ICP source power, and gas flow. Si etch rates > 3 {micro}m/min with etch selectivities to resist > 75:1 were obtained. Lateral dimensional control, etch selectivities to SiO{sub 2} and Si{sub 3}N{sub 4}, and aspect ratio dependent etching (ARDE) will also be discussed.
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