Abstract
We investigated the effects of low-energy (<15 eV) ion bombardment on the properties of Al2O3 plasma-enhanced atomic layer deposition (ALD) films. High-flux ion bombardment caused interfacial mixing with underlying material of Si, and AlSiOx films were formed instead of Al2O3 films. The interfacially mixed AlSiOx films were selectively formed on single-crystal and amorphous Si surfaces, whereas normal ALD Al2O3 films were formed on SiO2 surfaces. The interfacially mixed AlSiOx films possessed thin (∼0.8 nm) SiOx interlayers and abrupt interfaces. The interfacial mixing synthesis has the potential to realize simultaneous area and topographically selective depositions in combination with selective etching.
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