Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots in nanowires

Abstract

A process is described where the position, size, and cladding of an InP nanowire with an embedded InAsP quantum dot are determined by design through lithography, processing, and growth. The vapor-liquid-solid growth mode on a patterned substrate is used to grow the InP core and defines the quantum dot size to better than ±2 nm while selective-area growth is used to define the cladding thickness. The clad nanowires emit efficiently in the range λ=0.95–1.15 μm. Photoluminescence measurements are used to quantify the dependence of the excitonic energy level structure on quantum dot size for diameters 10–40 nm.