Abstract
We investigated the influence of growth pressure and V/III ratio on selectively grown InGaAs/InGaAsP MQW by using low-pressure metalorganic vapor phase epitaxy (MOVPE). Diffusion parameters were determined from curve fitting to experimental data by using the diffusion equation. The diffusion length decreased with the increase of growth pressure. The growth enhancement at the center of the mask opening increased and saturated over growth pressure of 100 mbar. The uniformity of PL intensity along the lateral direction was improved with the decrease of growth pressure and V/III ratio. We also realized a 1.55 μm SSC-LD with vertically tapered thickness waveguide. The device exhibited a far field angle of 6.9° × 12.4° and a slope efficiency as high as 0.31 W/A.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
