Selective area growth of InP and GaAs by chemical beam epitaxy using a novel temperature control: effects of growth conditions and pattern directions

Abstract

Selective area growth of InP and GaAs on SiO 2 patterned substrates aligned along [1 1 0] and [1 1 ̄ 0] directions was carried out by chemical beam epitaxy using a novel temperature control at various growth conditions such as growth temperature and group III pressure. The dependence of selective growth rate on stripe widths and pattern directions was examined. Diffused reflectance spectroscopy was used for the precise real-temperature control of the substrate in real time. For InP, no deposition of the polycrystalline InP on SiO 2 masks occurred for all experimental conditions. The complete SAG of high-quality InP (i.e., resulting in no formation of polycrystals on the SiO 2 mask and good morphology) was achieved at a wide temperature range of about 485–505°C with 1.80×10 −6–3.60×10 −6 Torr TMIn and 1.27×10 −4 Torr PH 3. For GaAs, the selectivity was obtained at a low temperature of about 570°C with 2.31×10 −6 Torr TEGa and 7.28×10 −5 Torr AsH 3. These results were improved compared with the results obtained by using conventional thermocouple temperature control.