Surface selective growth of GaInAsP heterostructures by metalorganic MBE

Abstract

In metalorganic MBE the chemical reactions at the growth front play a major role leading to surface selective growth (SSG). The report describes how the experimental parameters can be optimized in order to obtain high quality selective area growth of InP and GaInAsP in the unmasked areas of the substrate. It is discussed that the use of slightly misoriented substrates enables the fabrication of selectively grown heterostructures with vertical sidewalls facets, so that the growth of vertical and horizontal superlattices with no detectable material fluctuations can be obtained. The SSG is used to advantage for achieving a different quaternary material composition on the vertical planes than on the horizontal ones. In addition for the case of embedded selective area growth an almost ideal (constant thickness and material composition) InP/GaInAsP heterostructure infill into a 1 μm deep tub is demonstrated. This is an important result for a successful integration of various heterostructure devices using selective area epitaxy.