Abstract
Single crystals of GaP were grown on 4° miscut (100) Si substrates by selective area metalorganic chemical vapor deposition. Silicon nitride patterns were used to mask the wafer; no GaP nucleated on the silicon nitride patterns. The top and side walls of the selectively grown GaP stripes (3 μm width) seem to be the (100) and (111) crystal planes. Cross-sectional TEM analysis revealed a smooth GaPSi interface. Focused Raman spectroscopy with a spatial resolution of ∼ 1 μm was used to assess the crystal quality of individual GaP mesas.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
