Abstract
We have investigated the influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition (MOCVD) on GaAs (0 0 1) vicinal substrates. Macroscopic steps several hundred angstroms high were generated on the epitaxial layer over triangular voids where the voids were formed using the conditions of the reverse-mesa-shaped facets. AFM observations of the steps revealed that the exact (0 0 1) crystallographic surface developed on the side for which the (0 0 1) surface is exposed since the surface energy of a low index plane was lower than that of a misoriented high index plane. The wide terrace width of 1100 Å was also observed, which was evidence for the step flow mode growth. Periodic steps were generated over the periodic stripe masks and their potential application to quantum wire fabrication was discussed briefly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
