Abstract
We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a thin Ti metal film used as a mask. The mask was fabricated with a lift-off method to avoid damage to the mask or Si substrate. The growth on the Ti film was totally suppressed at a low substrate temperature of 840 °C which is by far the lowest critical temperature for SAG. An InGaN thin layer was embedded in the GaN nanowires to realize a site controllable single photon source. Transmission electron microscopy (TEM) indicates single crystalline quality of defect-free GaN nanowires and the embedded InGaN quantum dot structure.
Accepted Version (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call