Abstract
Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of donor-bound and free exciton emissions in individual nanostructures, pointing towards an improvement of the material quality as compared to the original template. Upon nanostructures coalescence a decrease of the full width half maximum value, down to 2 meV, is observed. These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates.
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