Abstract
A superlattice (SL) resonant tunneling field-effect transistor (RTFET) is one of the candidates for future FETs. However, there is a difficulty in forming high-quality SL with various lattice mismatched systems. The nanowire (NW) structure shows promise in terms of avoiding the misfit dislocation, suggesting that a lattice-mismatched InGaAs/AlInAs SL NW can be formed for the RTFET. We report on the selective-area growth of AlInAs NWs forInGaAs/AlInAs NW RTFETs.
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