Abstract
We propose a novel method for realizing the selective-area growth (SAG) of GaAs using metal gallium, instead of carbon-containing group-III sources, such as trimethylgallium (TMGa). In order to eliminate the growth of GaAs on a SiO 2 mask, trisdimethylaminoarsine (As[N(CH 3) 2] 3, TDMAAs) was used as an arsenic source. The growth of GaAs on SiO 2 was suppressed by increasing the substrate temperature and the TDMAAs beam-equivalent pressure (BEP). SAG was achieved at substrate temperatures of 550°C and higher. A smooth surface with a (2 × 4) reconstruction was obtained under a specific TDMAAs BEP. The epitaxial growth rate of GaAs decreased along with increasing the TDMAAs BEP; eventually, etching of GaAs by TDMAAs occurred at 600°C. The results show that SAG takes place due to the effect of an active species derived from TDMAAs on the re-evaporation of Ga adatoms from SiO 2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
