Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD

Abstract

Selective and non-planar epitaxy are important variants of the basic MOCVD process by which advanced III–V opto-electronics structures may be realised. This paper reviews work on the selective area growth of InP, GaInAs and GaInAsP some of which is both wide ranging and qualitative and some of which is focused and quantitative. A model has been developed which accurately describes the perturbations in material characteristics produced by selective area epitaxy. Non-planar epitaxy also is dealt with as a generic materials issue as well as attempting to relate the findings to such structures as butt coupled waveguides and buried heterostructure lasers. The exploitation of selective area epitaxy for the fabrication of a monolithically integrated laser/modulator is described and a brief account of device performance is given.