Selection Method of Test Pulse Width and Amplitude to Avoid Self-heating Effect of Power Devices

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The objective of this study was to address the deviation of electrical parameters, which is caused by the self-temperature rise effect of power devices in electrical testing processes. The pulse width and amplitude of the device test were considered as the research object. The three-dimensional variation of the power, junction temperature, and pulse width of semiconductor power devices were investigated using the principle of electrical temperature measurement, and the three-dimensional variation surfaces of the power, junction temperature, and pulse width were established. A method for selecting the pulse width and amplitude of the test to avoid the self-temperature rise of the power device is proposed. This method uses cutting projection to obtain the characteristic curve of the pulse width and power change, and selects an appropriate two-dimensional region of the pulse width and power to avoid the self-temperature rise of the power device. Moreover, the proposed method can be used as a reference when selecting a pulse test method.