Abstract
We report selected area growth of GaAs by XeF excimer laser induced pyrolysis of triethylgallium (TEGa) adsorbed on GaAs(100). TEGa dissociatively chemisorbs at 400 °C to form a stable layer which decomposes further under laser irradiation to liberate hydrocarbon products. The Ga left behind on the surface reacts with As2 and As4 (formed by pyrolysis of trimethylarsine or triethylarsine in a side tube) to grow GaAs in irradiated areas. Patterned films with feature sizes of ∼70 μm (limited by the projection system) were grown by this method. Interference between the incident beam and light scattered along the surface causes a substructure of parallel lines, with a spacing about equal to the laser wavelength (0.35 μm), to form on the features. This indicates that the ultimate spatial resolution is comparable to that predicted by thermal diffusion calculations (∼0.3 μm).
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