Abstract
Cu-implanted Si crystals were irradiated with $Q$-switched ruby-laser single pulses. After irradiation with energy density in excess of 1.0 J/${\mathrm{cm}}^{2}$, the Cu atoms accumulate at the sample surface. Thermal annealing in the 500-800\ifmmode^\circ\else\textdegree\fi{}C range casues a migration of Cu inside the specimen, in agreement with diffusion coefficient and solid solubility values. The results indicate the formation of a liquid layer induced by laser irradiation. The solid-liquid interface movement during freezing qualitatively justifies the observed surface accumulation.
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